Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.292-295
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- 2004
A Study on the Improvement of Forward Blocking Characteristics in the Static Induction Transistor
Static Induction Transistor의 순방향 블로킹 특성 개선에 관한 연구
- Kim, Je-Yoon (Korea University, Electrical Engineering) ;
- Jung, Min-Chul (Korea University, Electrical Engineering) ;
- Yoon, Jee-Young (Korea University, Electrical Engineering) ;
- Kim, Sang-Sik (Korea University, Electrical Engineering) ;
- Sung, Man-Young (Korea University, Electrical Engineering) ;
- Kang, Ey-Goo (Far-East University, Electronic Engineering)
- 김제윤 (고려대학교 전기공학과) ;
- 정민철 (고려대학교 전기공학과) ;
- 윤지영 (고려대학교 전기공학과) ;
- 김상식 (고려대학교 전기공학과) ;
- 성만영 (고려대학교 전기공학과) ;
- 강이구 (극동대학교 전자공학과)
- Published : 2004.07.05
Abstract
The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.