Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.284-287
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- 2004
Development Characteristics of PMMA fabricated by X-ray Lithography in Various Development Conditions
X-ray 식각된 PMMA의 다양한 현상조건에 따른 현상특성
- Kim, Yun-Ho (Hankuk Aviation Uni) ;
- Park, Joon-Shik (Korea Electronics Technology Institute) ;
- Lee, In-Gyu (Hankuk Aviation Uni) ;
- Park, Soon-Sup (Korea Electronics Technology Institute)
- Published : 2004.07.05
Abstract
Micro-structures fabricated by X-ray lithography are largely affected by doses, development conditions and other factors. For these reasons, PMMA development rates and its surface profiles under various development conditions were obseued. Development rates were measured in the rage from 1 to 6