한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.280-283
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- 2004
2-5kV급 Gate Commutated Thyristor 소자의 제작 특성
Device characteristics of 2.5kV Gate Commutated Thyristor
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김상철
(한국전기연구원 전력반도체연구그룹) ;
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김형우
(한국전기연구원 전력반도체연구그룹) ;
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서길수
(한국전기연구원 전력반도체연구그룹) ;
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김남균
(한국전기연구원 전력반도체연구그룹) ;
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김은동
(한국전기연구원 전력반도체연구그룹)
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Kim, Sang-Cheol
(Power Semiconductor Group, KERI) ;
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Kim, Hyung-Woo
(Power Semiconductor Group, KERI) ;
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Seo, Kil-Soo
(Power Semiconductor Group, KERI) ;
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Kim, Nam-Kyun
(Power Semiconductor Group, KERI) ;
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Kim, Eun-Dong
(Power Semiconductor Group, KERI)
- 발행 : 2004.07.05
초록
This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed