Enhancement of the ferroelectric properties of $Pb(Zr,Ti)O_3$ thin films with $Pb(La,Ti)O_3$ buffers fabricated by pulsed laser deposition

PLT buffer층의 삽입에 따른 강유전 PZT박막의 특성 향상

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.