Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.63-66
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- 2004
An Overview of SiC as the Nonvolatile Random-Access Memory Material
- Cheong, Kuan Yew (Power Semiconductor Research Group, Korea Electrotechnology Research Institute)
- 청콴유 (한국전기연구원 전력반도체 연구그룹)
- Published : 2004.07.05
Abstract
The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.