대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

PECVD로 증착된 SiC을 박막의 다양한 금속으로 제작된 SiC Schottky diode 전기적 특성에 따른 연구

A study on the electrical characteristic of Schottky diode fabricated using various metals based on SiC thin film deposited by PECVD

  • 송진형 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김정우 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김지균 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 이헌용 (명지대학교 전기공학과 전기전자재료연구실)
  • Song, J.H. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Kim, J.W. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Kim, J.G. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Lee, H.Y. (Electrical and Electronic Material Lab, Myong Ji University)
  • 발행 : 2004.11.05
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

키워드