대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
- /
- Pages.501-504
- /
- 2004
Nitrogen source로 ammonia를 사용해 GSMBE로 성장된 GaN 박막 특성
Growth of GaN on sapphire substrate by GSMBE(gas source molecular beam epitaxy) using ammonia as nitrogen source
- 조해종 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
- 한교용 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
- 서영석 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
- ;
- Cho Hae-jong (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
- Han Kyo-yong (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
- Suh Young-suk (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
- Misawa Yusuke (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
- Park Kang-sa (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University)
- 발행 : 2004.06.01
초록
High quality GaN layer was obtained on 0001 sapphire substrate using ammonia(
키워드