Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.06b
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- Pages.371-374
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- 2004
Thermal Stability Improvement of the Ni Germano-silicide formed by a novel structure Ni/Co/TiN using 2-step RTP for Nano-Scale CMOS Technology
- Huang Bin-Feng (Dept. of Electronics Engineering, Chungnam National University) ;
- Oh Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
- Yun Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
- Ji Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim Yong-Goo (Dept. of Electronics Engineering, Chungnam National University) ;
- Cha Han-Seob (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Heo Sang-Bum (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Lee Jeong-Gun (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Kim Yeong-Cheol (Dept. of Materials Engineering, Korea University of Technology and Education) ;
- Lee Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
- Published : 2004.06.01
Abstract
In this paper, Ni Germane-silicide formed on undoped
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