Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Switching and Retention Characteristics of PLT(5) Thin Films

PLT(5) 박막의 Switching 및 Retention 특성에 관한 연구

  • Choi Joon Young (Dept. of Electric & Electrical Engineering, Inha University) ;
  • Chang Dong Hoon (Dept. of Electric & Electrical Engineering, Inha University) ;
  • Kang Seong Jun (Dept. of Semoconductor Materials & Devices, Yosu National University) ;
  • Yoon Yung Sup (Dept. of Electric & Electrical Engineering, Inha University)
  • 최준영 (인하대학교 전자 전기공학부) ;
  • 장동훈 (인하대학교 전자 전기공학부) ;
  • 강성준 (여수대학교 반도체학과) ;
  • 윤영섭 (인하대학교 전자 전기공학부)
  • Published : 2004.06.01
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Abstract

We fabricated PLT(5) thin film on $Pt/TiO_x/SiO_2/Si$ substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was $3.56{\times}10^{-7}A/cm^2$ at 4V. In the examination of switching properties, pulse voltage and load resistance were $2V{\~}5V$ and $50{\Omega}{\~}3.3k{\Omega}$, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to $13.7{\mu}s$ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about $10\%$. Also, polarization in retention was decreased as much as about $8\%$ after $10^5$s.

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