대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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- Pages.355-358
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- 2004
RESURF type의 SOI n-LDMOSFET 소자 설계 및 제작
The Design and Fabrication of RESURF type SOI n-LDMOSFET
- Kim, Jae-Seok (Dept. of Electronic Engineering, Sogang University) ;
- Kim, Beom-Ju (Dept. of Electronic Engineering, Sogang University) ;
- Koo, Jin-Gen (ETRI-Electronics and Telecommunications Research Institute) ;
- Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University) ;
- An, Chul (Dept. of Electronic Engineering, Sogang University)
- 발행 : 2004.06.01
초록
In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state (
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