한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.1127-1130
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- 2003
Study the Properties of Silicon Nitride Films prepared by High Density Plasma Chemical Vapor Deposition
- Gangopadhyay, Utpal (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Kim, Do-Young (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Parm, Igor Oskarovich. (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Chakrabarty, Kaustuv (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Kim, Chi-Hyung (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Shim, Myung-Suk (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Yi, Jun-Sin (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University)
- Published : 2003.07.09
Abstract
The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.
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