한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
- /
- Pages.412-414
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- 2003
비정질 셀레늄 기반에서 CsI:Na 응용을 위한 Na의 조성비 연구
The study of Na Doping rate for application CsI:Na in the amorphous selenium
-
차병열
(인제대학교 의료영상연구소)
;
- 박지군 (인제대학교 의료영상연구소) ;
-
강상식
(인제대학교 의료영상연구소)
;
- 이규홍 (인제대학교 의료영상연구소) ;
-
남상희
(인제대학교 의료영상연구소)
;
-
최흥국
(인제대학교 의료영상연구소)
-
Cha, Byung-Youl
(Medical Imaging Research Center of InJe University)
;
- Park, Ji-Koon (Medical Imaging Research Center of InJe University) ;
-
Kang, Sang-Sik
(Medical Imaging Research Center of InJe University)
;
- Lee, Kyu-Hong (Medical Imaging Research Center of InJe University) ;
-
Nam, Sang-Hee
(Medical Imaging Research Center of InJe University)
;
-
Choi, Heung-Kook
(Medical Imaging Research Center of InJe University)
- 발행 : 2003.11.13
초록
This paper is about research of scintillator layer, which is used for Hybrid method to increase electric signals in a-Se, the material of Direct method. In case of the thermal evaporation, CsI has column structure which is an disadvantage as scintillator. But it decreases scattering of incident X-ray, has better Light output intensity than other scintillation materials. CsI was made by Thermal evaporation. The Doping material, Na, 0.1, 0.3, 0.5, 0.7g were added in each sample. Analysis of absorbed wavelength, PL(Photoluminescence), Light output intensity, SEM, and XRD analysis were performed to analyze optical characteristics. Doping rate of CsI:Na to use as scintillation layer in a-Se based detector could be optimized.