한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$Si/Al_2O_3/Si$ 형태의 SOI(SOS) LIGBT 구조에서의 열전도 특성 분석

The thermal conductivity analysis of the SOI LIGBT structure using $Al_2O_3$

  • 김제윤 (고려대학교 전기공학과) ;
  • 김재욱 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • 발행 : 2003.11.13
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초록

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

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