Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.863-866
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- 2003
A CMOS Macro-Model for MRAM cell based on 2T2R Structure
2-Transistor와 2-Resister 구조의 MRAM cell을 위한 CMOS Macro-Model
Abstract
Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-
Keywords