Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
- /
- Pages.743-746
- /
- 2003
Ge thin layer transfer on Si substrate for the photovoltaic applications
Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발
Abstract
We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p
Keywords