Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.711-714
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- 2003
Effect of rapid thermal annealing on interface trap density by using subthreshold slope technique in the FD SOI MOSFETs
완전 결핍 SOI MOSFET의 계면 트랩 밀도에 대한 급속 열처리 효과
- Jihun Oh (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Cho, Won-ju (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Yang, Jong-Heon (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Kiju Im (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Baek, In-Bok (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Ahn, Chang-Geun (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
- Lee, Seongjae (Nano Electronic Devices Team Electronics and Telecommunications Research Institute)
- Published : 2003.07.01
Abstract
In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D
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