한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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- Pages.109-109
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- 2003
Electrical and magnetic properties of GaMnN with varying the concentrations of Mn and Mg
- F.C. Yu (Department of Materials Engineering, Chungnam University) ;
- Kim, K.H. (Department of Materials Engineering, Chungnam University) ;
- Lee, K.J. (Department of Materials Engineering, Chungnam University) ;
- H.S. Kang (Department of Materials Engineering, Chungnam University) ;
- Kim, J.A. (Department of Materials Engineering, Chungnam University) ;
- Kim, D.J. (Department of Materials Engineering, Chungnam University) ;
- K.H. Baek (Department of Materials Engineering, Chungnam University) ;
- Kim, H.J. (Department of Materials Engineering, Chungnam University) ;
- Y.E. Ihm (Department of Materials Engineering, Chungnam University)
- 발행 : 2003.05.01
초록
III- V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaNnAs into semiconductor. GaMnN may be one of the possible candidates for room temperature operation. Samples were grown on sapphire (0001) substrate at
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