A study on the design of the stable internal voltage system for DRAM's

DRAM의 안정한 내부 전압 시스템 설계에 관한 연구

This paper presents a new reference voltage generator(RVG) for advanced DRAM's. The proposed RVG with three temperature coefficient is independent of temperature variation, and supply voltage. This is used to shorten leakage current using the boosted sense ground(BSG). This circuit is designed in a 0.8.mu.m nwell CMOS, double-polysilicon, double-metal technology. The simulation resutls in jindependent temperature and supply voltage. In hspice simulation results, temperature dependency of RVG is 130.mu.V/.deg. C and supply voltage dependency is .+-.0.91%, $V_{cc}$ =3.3V.+-. 0.5V.3.3V.+-. 0.5V.