InGaP/GaAs HBT 의 DC 특성과 신뢰도

DC characteristics and reliability of InGaP/GaAs HBTs

  • 최번재 (동아대학 공과대학 전자공학과) ;
  • 최재훈 (동아대학 공과대학 전자공학과) ;
  • 송정근 (동아대학 공과대학 전자공학과)
  • 발행 : 1998.06.01

초록

Recently, InGaP/GaAs HBTs have been much interested as a potential replacement for AlGaAs/GaAs HBTs because of their superior device and material properties. In this paper, DC characteristics of InGaP/GaAs HBTs and the temperature dependance as well as the reliability were investigated comparing with AlGaAs/GaAs HBTs. As a results InGaP/GaAs HBTs produced the superior performance to AlGaAs/GaAs HBTs.

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