대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1998년도 하계종합학술대회논문집
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- Pages.398-400
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- 1998
GaN계 질화합물 반도체의 습식식각 연구
Studies on chemical wet etching of GaN
초록
In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10
키워드