한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

MOD법을 이용 제조한 $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}$ 박막의 열처리 온도에 따른 전기적 특성

Electrical Characteristics of $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}$ Thin Films Prepared by MOD Process Depending on Annealing Temperatures

  • Kim, Ki-Beom (Department of Materials Engineering, Chungbuk National University) ;
  • Jang, Gun-Eik (Department of Materials Engineering, Chungbuk National University)
  • 발행 : 2002.11.07
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

키워드