한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Pt/BLT/$CeO_2$/Si 구조를 이용한 MFIS의 특성

Characteristics of MFIS using Pt/BLT/$CeO_2$/Si structures

  • 발행 : 2002.11.07
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초록

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X-ray diffraction was used to determine the phase of the BLT thin films and the quality of the $CeO_2$ layer. The morphology of films and the interface structures of the BLT and the $CeO_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 4.78 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

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