Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.11a
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- Pages.163-166
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- 2002
A Study on the Characteristic of MOS structure using $HfO_{2}$ as high-k gate dielectric film
$HfO_{2}$ 를 이용한 MOS 구조의 제작 및 특성
- Park, C.I. (Dept. of Micro Engineering, Korea Univ.) ;
- Youm, M.S. (Dept. of Electric Engineering, Korea Univ.) ;
- Park, J.W. (Dept. of Electric Engineering, Korea Univ.) ;
- Kim, J.W. (Dept. of Electric Engineering, Korea Univ.) ;
- Sung, M.Y. (Dept. of Electric Engineering, Korea Univ.)
- 박천일 (고려대학교 미세소자공학 협동과정) ;
- 염민수 (고려대학교 전기공학과) ;
- 박전웅 (고려대학교 전기공학과) ;
- 김재욱 (고려대학교 전기공학과) ;
- 성만영 (고려대학교 전기공학과)
- Published : 2002.11.07
Abstract
We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium