증착 온도에 따른 실리콘 나노결정 박막의 광학적 특성변화 연구

Effect of deposition temperature on the photoluminescence of Si nanocrystallites thin films

  • 전경아 (연세대학교 전기전자공학과) ;
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 최진백 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • 발행 : 2002.04.27

초록

The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to $400^{\circ}C$. After deposition, samples were annealed at $800^{\circ}C$ in nitrogen ambient, Strong Blue PL has been observed on RT-deposited Si nanocrystallites. When the deposition temperature was increased over $100^{\circ}C$, PL intensities abruptly decreased. The experimental results show the growing mechanism of Si nanocrystallites by PLD.

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