Structureal and dielectric properties of $(Pb_{x},Sr_{x-1})TiO_{3}$ thin film for tunable device application

Tunable 소자 응용을 위한 $(Pb_{x},Sr_{x-1})TiO_{3}$ 박막의 구조 및 유전특성

  • 김경태 (중앙대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부) ;
  • 이성갑 (서남대학교 전기전자공학과)
  • Published : 2002.05.17

Abstract

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

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