Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The etching characteristics of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ film Using $Ar/CF_{4}$ Inductively Coupled Plasma

$Ar/CF_{4}$ 유도결합 플라즈마로 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 특성분석

  • 강필승 (중앙대학교 전기전자공학부) ;
  • 김경태 (중앙대학교 전기전자공학부) ;
  • 김동표 (중앙대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부) ;
  • 이수재 (한국전자통신연구원 반도체 원천기술연구소)
  • Published : 2002.05.17
Download PDF
⟨ Previous Next ⟩

Abstract

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

Keywords