한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

이온빔 스퍼터링법으로 제조된 SBN 박막의 특성

SBN Thin films Prepared by Ion Beam Sputtering method

  • 이동근 (영남대학교 재료금속공학과) ;
  • 장재훈 (영남대학교 재료금속공학과) ;
  • 이희영 (영남대학교 재료금속공학과)
  • 발행 : 2002.07.08
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초록

Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.

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