• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1144-1147
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• 2002

Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.