Characteristics analysis of ZnO-Si-ZnO multi-layer thin films by pulsed laser deposition

펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 분석

  • 강홍성 (연세대학교 전기전자공학과) ;
  • 강정석 (연세대학교 전기전자공학과) ;
  • 심은섭 (연세대학교 전기전자공학과) ;
  • 방성식 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2002.07.08

Abstract

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

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