Co-sputtering법으로 제조한 InSb 박막의 미세구조와 전자거동

Micro structures and electronic behavior of InSb using by co-sputtering method

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.