한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$Ar/O_2$비에 따른 (Ba, Sr)(Nb, Ti)$O_3$[BSNT] 박막의 구조적 특성

The structural properties of the (Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films with $Ar/O_2$ rates

  • 남성필 ( 광운대학교 전자재료공학과) ;
  • 이상철 ( 광운대학교 전자재료공학과) ;
  • 김지헌 ( 광운대학교 전자재료공학과) ;
  • 박인길 (신성대 전자정보통신과) ;
  • 이영회 ( 광운대학교 전자재료공학과)
  • 발행 : 2002.07.08
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초록

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

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