한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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- Pages.46-49
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- 2002
Recent Trend of Low Temperature Poly Silicon Technologies in TFT-LCD
- Kim, C.W. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Kim, H.J. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Lee, H.G. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Min, H.G. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Hwang, J.W. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Cho, S.W. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Ryu, C.K. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Lee, C. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Kang, M.K. (R&D Team, AMLCD Division, Samsung Electronics) ;
- Chung, K.H. (R&D Team, AMLCD Division, Samsung Electronics)
- 발행 : 2002.08.21
초록
Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.
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