집적회로용 PNP BJT의 베이스 Gummel Number 계산 방법에 관한 연구

A study on the method of the calculation of the base Gummel number of the PNP BJT for integrated circuits

  • 이은구 (인하대학교 전자과 반도체연구실) ;
  • 이동렬 (부천대학 정보통신과) ;
  • 김태한 (인하대학교 전자과 반도체연구실) ;
  • 김철성 (인하대학교 전자과 반도체연구실)
  • 발행 : 2002.11.09

초록

The method of the analysis of the base Gummel number of the PNP BJT(Bipolar Junction Transistor) for integrated circuits based upon the semiconductor physics is proposed and the method of calculating the doping profile of the base region using process conditions is presented. The transistor saturation current obtained from the proposed method of PNP BJT using 20V and 30V process shows an averaged relative error of 6.7% compared with the measured data.

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