Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.11a
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- Pages.3-5
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- 2002
Breakdown Characteristics of a Punch-through Diode with N+P+P-H+ Structure
N+P+P-N+ 구조를 가진 Punch-through 다이오드의 항복전압 특성
- Song, Se-Won (Department of Electronics Engineering, Ajou University) ;
- Chung, Sang-Koo (Department of Electronics Engineering, Ajou University) ;
- Choi, Yearn-Ik (Department of Electronics Engineering, Ajou University)
- Published : 2002.11.09
Abstract
Breakdown characteristics of a punch-through diode with n+p+p-n+ structure are analyzed with two-dimensional device simulation. Effects of base doping concentration and profile on the breakdown are presented. An analytical expression of a maximum base doping level for the punch-through breakdown is derived. The diode with a linearly graded base doping shows superior leakage current and capacitance is satisfactory for applications for low-voltage circuits.
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