한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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Preparation of $(Bi,La)Ti_{3}O_{12}$ Thin Films on $Al_{2}O_{3}/Si$ Substrates by the Sol-Gel Method

  • Chang, Ho Jung (Dept. Electronics Engineering, Dankook University) ;
  • Hwang, Sun Hwan (Dept. Electronics Engineering, Dankook University) ;
  • Chang, Ho Sung (Dept. Electrical, Electronics and Computer Engineering, Dankook University) ;
  • Sawada, K. (Dept. Electrical and Electronics Engineering, Toyohashi University of Technology) ;
  • Ishida, M. (Dept. Electrical and Electronics Engineering, Toyohashi University of Technology)
  • 발행 : 2002.11.01
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초록

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

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