대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 ITC-CSCC -3
- /
- Pages.1559-1562
- /
- 2002
An Ultra-High Speed 1.7ns Access 1Mb CMOS SRAM macro
- T.J. Song (Design Technology Dept., System LSI Div., SamSung Ltd) ;
- E.K. Lim (Design Technology Dept., System LSI Div., SamSung Ltd) ;
- J.J. Lim (Design Technology Dept., System LSI Div., SamSung Ltd) ;
- Lee, Y.K. (Design Technology Dept., System LSI Div., SamSung Ltd) ;
- Kim, M.G. (Design Technology Dept., System LSI Div., SamSung Ltd)
- 발행 : 2002.07.01
초록
This paper describes a 0.13um ultra-high speed 1Mb CMOS SRAM macro with 1.7ns access time. It achieves ultra-high speed operation using two novel approaches. First, it uses process insensitive sense amplifier (Double-Equalized Sense Amplifier) which improves voltage offset by about 10 percent. Secondly, it uses new replica-based sense amplifier driver which improves bit- line evaluation time by about 10 percent compared to the conventional technique. The various memory macros can be generated automatically by using a compiler, word-bit size from 64kb to 1 Mb including repairable redundancy circuits.
키워드