A 3-stage Wideband Q-band Monolithic Amplifier for WLAN

  • Kang, Dong-Min (Microwave Devices Team, Wireless Communication Devices Dept., Basic Research Lab., ETRI) ;
  • Lee, Jin-Hee (Microwave Devices Team, Wireless Communication Devices Dept., Basic Research Lab., ETRI) ;
  • Yoon, Hyung-Sup (Microwave Devices Team, Wireless Communication Devices Dept., Basic Research Lab., ETRI) ;
  • Shim, Jae-Yeob (Microwave Devices Team, Wireless Communication Devices Dept., Basic Research Lab., ETRI) ;
  • Lee, Kyung-Ho (Microwave Devices Team, Wireless Communication Devices Dept., Basic Research Lab., ETRI)
  • Published : 2002.07.01

Abstract

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) amplifier for WLAN are presented using 0.2$\square$ AIGaAs/lnGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). In each stage of the MMIC, a negative feedback is used for both broadband and good stability. The measurement results are achieved as an input return loss under -4dB, an output return loss under -10dB, a gain of 14dB, and a PldB of 17dBm at Q-band(36~44GHz). These results closely match with design results. The chip size is 2.8${\times}$1.3mm$^2$. This MMIC amplifier will be used as the unit cell to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

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