Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
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- Pages.365-368
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- 2002
The Development of Hot Carrier Immunity Device in NMOSFET's
NMOSFET에서 핫-캐리어 내성의 소자 개발
Abstract
WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.
Keywords