Improvement of Pentacene Thin Film Transistor Performance

Pentacene Thin Film Transistor의 성능 개선

  • 이상백 (동아대학교 전기전자컴퓨터공학부) ;
  • 이명원 (동아대학교 전기전자컴퓨터공학부) ;
  • 김광현 (동아대학교 전기전자컴퓨터공학부) ;
  • 허영헌 (동아대학교 전기전자컴퓨터공학부) ;
  • 송정근 (동아대학교 전기전자컴퓨터공학부)
  • Published : 2002.06.01

Abstract

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

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