Analysis of characteristics of PHEMT's with gate recess etching method

게이트 리세스 식각 방법에 따른 PHEMT 특성 변화

we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.