대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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- Pages.217-220
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- 2002
고온영역에서 게이트 확장 길이 변화에 따른 고내압 LDMOSFET의 전기적 특성연구
A Study on the High Temperature Characteristics of Power LDMOSFETS Having Various 130en0e0 Gate Length
- Kim, Beom-Ju (Dept. of Electronic Engineering, Sogang University) ;
- Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University) ;
- Roh, Tae-Moon (ETRI-Electronics and Telecommunications Research Institute) ;
- An, Chul (Dept. of Electronic Engineering, Sogang University)
- 발행 : 2002.06.01
초록
In this paper, we have investigated electronical chara-cteristics of power LDMOSFETS having different ex-tended gate lengths(1.B
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