대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

InP의 습식식각특성과 InP/lnGaAs HBT의 제작

Wet etching charicteristics of InP in InP/InGaAs HBTs and their fabrication

  • 김강대 (동아대학교 전기전자컴퓨터공학부) ;
  • 박재홍 (춘해대학 컴퓨터정보과) ;
  • 김용규 (거창기능대학 메카트로닉스과) ;
  • 황성범 (경남정보대학 전자정보학부) ;
  • 송정근 (동아대학교 전기전자컴퓨터공학부)
  • 발행 : 2002.06.01
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초록

In this paper, InP-based HBTs have been optimally designed by numerical simulation and fabricated by the self-aligned process. The structure of HBT was designed in terms of the current gain*f$_{max}$ for the base and f$_{T}$*f$_{max}$ for the collector. The designed structure produced the current gain of about 50 and the cutoff frequency and the maximum oscillation frequency of 87GHz and 2940Hz respectively. In addition, we present a study of the vertical and lateral etching of InP with the mask sides parallel to the principal crystallographic axes, [0101 and (001). This etching characteristics arc used to fabricate self-aligned HBT structures with reduced parasitic effects.s.s.s.

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