Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07a
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- Pages.202-205
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- 2002
High Temperature Crystallized Poly-Si on the Molybdenum Substrate for Thin Film Transistor Applications
몰리브덴 기판 위에 고온 결정화된 다결정 실리콘 박막 트랜지스터 특성에 관한 연구
Abstract
Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300