한국마이크로전자및패키징학회:학술대회논문집 (Proceedings of the International Microelectronics And Packaging Society Conference)
- 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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- Pages.274-278
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- 2002
Etching and Polishing Behavior of Cu thin film according to the additive chemicals
초록
The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.
키워드