한국마이크로전자및패키징학회:학술대회논문집 (Proceedings of the International Microelectronics And Packaging Society Conference)
- 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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- Pages.252-254
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- 2002
알루미나와 실리카/실리콘 기판의 계면 분석
Analysis of Interfacial Layer between Alumina and Silica/Silicon Substrate
초록
Metal oxides with high dielectric constants have the potential to expend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx is formed and limits the specific capacitance of the gate structure. We deposisted aluminum oxide and examined the composition of the interfacial layer by employing high-resolution X-ray photoelectron spectroscopy and X-ray reflectivity. We find that the interfacial region is not pure SiO
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