Fabrication of Heating Actuator Using Cobalt Silicided Thin Films

코발트실리사이드 박막을 이용한 발열 엑츄에이터의 제작

  • 노영규 (단국대학교 전자컴퓨터학부) ;
  • 장호정 (단국대학교 전자컴퓨터학부)
  • Published : 2002.05.01

Abstract

The cobalt silicide was formed OH POly-Si/SiO$_2$/Si Substrates by the E-beam evaporation of Co metal and rapid thermal annealing method for the application of heating actuators. The most stable CoSi$_2$crystal was obtained at temperature of above $700^{\circ}C$ for 20 sec in $N_2$ambient. From the SEM observation, the thickness and diameter of the heating elements were about $1{\mu}{\textrm}{m}$ and $50{\mu}{\textrm}{m}$, respectively. Temperature resistance coefficient of heating elements was found to be about 0.0014($1/^{\circ}C$) with $30~35\Omega$ of resistance.

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