대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2002년도 하계학술대회 논문집 C
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- Pages.2023-2025
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- 2002
SOI Wafer를 사용한 트렌치 구조의 수직 Hall 소자의 제작
The Vertical Trench Hall-Effect Device Using SOI Wafer
- Park, Byung-Hwee (School of Electronics and Information engineering, Yeungnam University) ;
- Jung, Woo-Chul (School of Electronics and Information engineering, Yeungnam University) ;
- Nam, Tae-Chul (School of Electronics and Information engineering, Yeungnam University)
- 발행 : 2002.07.10
초록
We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried
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