대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2002년도 하계학술대회 논문집 C
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- Pages.2020-2022
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- 2002
극한 환경 MEMS용 3C-SiC기판의 직접접합
Direct Bonding of 3C-SiC Wafer for MEMS in Hash Environments
- Chung, Yun-Sik (Dongseo University) ;
- Lee, Jong-Chun (Kyungnam College of Information and Technology) ;
- Chung, Gwiy-Sang (Dongseo University)
- 발행 : 2002.07.10
초록
SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/