대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Thermal Oxidation 법으로 제조된 $Ta_2O_5$ 박막의 유전체 물성에 관한 연구

The study on dielectric properties of $Ta_2O_5$ thin films obtained by thermal oxidation

  • 김인성 (한국전기연구원 전자기소자연구그룹) ;
  • 김현주 ;
  • 민복기 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹)
  • Kim, I.S. (Korea Electrotechnology Research Institute) ;
  • Kim, H.J. (Changwon University) ;
  • Min, B.K. (Korea Electrotechnology Research Institute) ;
  • Song, J.S. (Korea Electrotechnology Research Institute)
  • 발행 : 2002.07.10
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초록

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

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