Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Electric Characteristics of $Ba_{0.7}Sr_{0.3}TiO_{3}$ by Coating Numbers

코팅 횟수에 따른 $Ba_{0.7}Sr_{0.3}TiO_{3}$ 박막의 전기적 특성

  • 홍경진 (광주대학교 컴퓨터전자통신공학부) ;
  • 민용기 (광주대학교 컴퓨터전자통신공학부) ;
  • 기현철 (전남대학교 전기공학과) ;
  • 조재철 (초당대학교 전자공학과)
  • Published : 2001.05.11
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Abstract

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

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